Chemical mechanical planarization IV : proceedings of the International Symposium /
| Corporate Authors: | , , , |
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| Other Authors: | , |
| Format: | Conference Proceeding Book |
| Language: | English |
| Published: |
Pennington, NJ :
Electrochemical Society, Inc.,
c2001
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| Series: | Proceedings (Electrochemical Society) ;
v. 2000-26 |
| Subjects: |
Table of Contents:
- Challenges and State of the Art in Simulation of Chemo-Mechanical Processes / S. B. Trickey and P. Deymeier
- CMP Finite Element Contact Model: Wafer and Feature Scale / A. Kim, M. K. R. Williams, J. Tichy and T. Cale
- Study on Nano-Scale Wear of Silicon Oxide in CMP Processes / S. Seta, T. Nishioka, Y. Tateyama and N. Miyashita
- Multi-Scale Modeling of Flow and Mass-Transfer in Chemical Mechanical Polishing / L. Jiang, H. Simka and S. Shankar
- Developing Engineered Particulate Systems for Oxide Chemical Mechanical Polishing / G. B. Basim, J. J. Adler, U. Mahajan, R. K. Singh and B. M. Moudgil
- Light Scattering Study of Roughness and Dishing on Post-CMP Wafers / P. Ding, R. Diaz and D. Hirleman
- CMP Pad Surface Roughness and CMP Removal Rate / Michael R. Oliver, Robert E. Schmidt and Maria Robinson
- Microstructural Characterization of CMP Polyurethane Polishing Pads / Susan Machinski, Kathleen Richardson and William Easter
- Non-Destructive Evaluation of CMP Pads Using Scanning Ultrasonic Technique / A. Belyaev, F. Diaz, W. Moreno, S. Ostapenko, F. Pacheno, I. Tarasov and D. Totzke
- Surface Characterization of Polyurethane Pads Used in Chemical Mechanical Polishing (CMP) / J. Ramsdell, S. Seal, I. Li, K. A. Richardson, V. Desai and W. G. Easter
- Chemically Reactive Polish Pad for Advanced Copper CMP Performance / Stan Tsai, Ping Li, Yuchun Wang, Shijian Li and Fritz Redeker
- Morphology Evolution During Copper CMP: Comparison of Fixed Abrasive and Conventional Pads / David R. Evans, Michael R. Oliver and Mike Kulus
- Pattern Dependent Polish Rate Behavior in Oxide Chemical Mechanical Polishing / A. Scott Lawing and Tushar Merchant
- Physical and Chemical Characterization of Re-Used Oxide CMP Slurry / Hyung-Joon Kim, Dae-Hong Eom, Myoung-Shik Kim and Jin-Goo Park
- Effect of Added Surfactant on Oxide to Polysilicon Selectivity During Chemical Mechanical Polishing / Jae-Dong Lee, Young-Rae Park, Bo Un Yoon, SangRok Rah and Joo-Tae Moon
- Concentration Gradient Effects in Tungsten Chemical Mechanical Polishing / M. Anik and K. Osseo-Asare
- An Electrochemical Investigation of Ti and TiN / Kalpathy B. Sundaram, Venkatraman S. Chathapuram, Vimal Desai and Sudipta Seal
- Electrochemical Effects of Various Slurries on the Chemical Mechanical Polishing of Copper-Plated Films / Tzu-Hsuan Tsai and Shi-Chern Yen
- Electrochemical Behavior of Copper in Hydroxylamine Solutions / Kwadwo Osseo-Asare and Ashraf T. Al-Hinai
- Effect of Organic Acids in Slurry on Copper CMP / Dae-Hong Eom, Hyung-Joon Kim, Hyung-Soo Song and Jin-Goo Park
- Role of Slurry Chemistry in Tungsten CMP / Dnyanesh Tamboli, Vimal Desai and Sudipta Seal
- Aqueous Slurries in Chemical Mechanical Polishing: Adsorption of Silicate Ions by Ceria / K. Osseo-Asare and P. Suphantharida
- Copper Metallization of Semiconductor Interconnects - Issues and Prospects / Uziel Landau
- Cu CMP for Dual Damascene Technology: Fundamentals / Y. Gotkis and Rodney Kistler
- Effects of Copper Film Thickness on Copper CMP Performance / T. C. Tsai, H. C. Chen, Y. T. Wei, Y. K. Shida, C. L. Hsu and M. S. Yang
- Characterization of Novel Post Cu CMP Cleaners Using Cu Contaminated Interlayer Dielectrics / Ichiro Kobayashi, Yoichiro Fujita, Tomoe Miyazawa, Hiroyoshi Fukuro, Russell D. Stevens and Tohru Hara
- Effect of Benzotriazole (BTA) on the Reduction of Ferric Ion on Copper / Ashraf T. Al-Hinai and Kwadwo Osseo-Asare
- Role of Inhibitors in Presence of Oxidizers in Cu-CMP / S. Seal, M. Boyd, V. Desai, J. Akesson, W. Easter and A. Guha
- Study on Ceria-Based Slurry for STI Planarization / Yoshikuni Tateyama, Tomoyuki Hirano, Takatoshi Ono, Naoto Miyashita and Takashi Yoda
- Low Cost and Effective IMP Planarization Using CMP and Resist Etchback / Victor S. K. Lim, Feng Chen, Wang Ling Goh, Chun Hui Low, Lap Chan, Chee Kiong Koo, Young Way Teh and Ting Cheong Ang
- Pattern Density and Trench Width Effects in STI CMP: Their Impacts on Electrical Performance / Jayashree Kalpathy, Eric Kirchner and Mike Berman
- Dishing Reduction Using Polysilicon Buffer STI-CMP Scheme / Victor S. K. Lim, Feng Chen, Wang Lih Goh, Lap Chan, Alex See Kong Hean Lee, Zheng Zou, Paul Proctor and Ting Cheong Ang